Occupation: : 369Date of Birth : 1994-09-29Join Date : 2010-11-12Age : 22
Subject: Transistor IGBT Fri 11 Mar 2011, 11:46 am
Transistor IGBT IGBT Transistor
Transistor IGBT Insulated Gate Bipolar Transistor) is a Turnzstr bipolar gate Isolated and combines the advantages of the bipolar transistors and high voltage Impact area at the speed of response and effort (energy) but low when youcontrol it Works at a low level of vibration does not exceed a few tens of kiloHertz .
Negative positive negative transistors NPN power usually is not transferred to the resistance effort r at the tip of the resistance In case of not enough that the presence of the power IGBT Turnzstr lose any control that is located in the case of Confined to (loss of ability to activation) Compilation Turnzstren equivalent (equivalent) Tterestr
Does not take place only if the limitation is cut off But the basic techniques used in the manufacture of this type of Alturnzstrut avoided this Phenomenon. Simple parity