Transistor IGBT

Subject: Transistor IGBT Fri 11 Mar 2011, 11:46 am

Transistor IGBT
IGBT Transistor

Transistor IGBT Bd1b8310

Transistor
IGBT Insulated Gate Bipolar Transistor) is a Turnzstr bipolar gate
Isolated and combines the advantages of the bipolar transistors and high voltage
Impact area at the speed of response and effort (energy) but low when youcontrol it
Works at a low level of vibration does not exceed a few tens of kiloHertz .

Transistor IGBT 1fefe210

Equivalent circuit

Negative positive negative transistors NPN power usually is not transferred to the resistance effort r at the tip of the resistance
In case of not enough that the presence of the power IGBT Turnzstr lose any control that is located in the case of
Confined to (loss of ability to activation) Compilation Turnzstren equivalent (equivalent) Tterestr

Does not take place only if the limitation is cut off
But the basic techniques used in the manufacture of this type of Alturnzstrut avoided this
Phenomenon.
Simple parity

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